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NX2000​

Focused Ion and Electron Beam System & Triple Beam System​

Toward the ultimate TEM sample preparation system

FIB-SEM systems have become an indispensable tool for characterization and analysis of the latest technologies and high performance nano-scale materials. An ever-increasing demand for ultrathin TEM lamellas without artifacts during FIB processing require the best in ion and electron optics technologies.​

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  • Features
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| High contrast, real-time SEM end point detection allows ultrathin TEM sample preparation of sub 20 nm devices.

Real-time SEM monitoring during FIB milling
Sample: NAND flash memory
Accelerating voltage: 1 kV
FOV: 0.6 µm

| Micro sampling* and high precision positioning mechanism* enable sample orientation control for Anti-Curtaining Effects (ACE function) and uniformly-thick lamellas.

With sample orientation control

Without sample orientation control

| Triple Beam system* Triple beam configuration for Ga FIB-induced damage reduction.

EB: Electron Beam
FIB: Focused Ion Beam
Ar: Argon ion beam

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