The inverted emission microscope is a backside analysis system designed to identify failure locations by detecting the light and heat emitted from the defects in semiconductor devices.

 

The signal detection from backside facilitates the use of probing and probe card to the wafer surface, and the sample setting can be performed smoothly. The platform, possible to mount multiple detectors and lasers, enables the selection of the optimum detector for performing various analysis methods such as light emission and heat generation analysis, IR-OBIRCH analysis, and others; moreover, letting dynamic analysis perform efficiently by tester connection.